Description
TSMF1000 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology molded in clear SMD package
In comparison with the standard GaAs on GaAs technology these emitters achieve about 100 % radiant power improvement at a similar wavelength.
The forward voltages at low current and at high pulse current roughly correspond to the low values of the standard technology. Therefore these emitters are ideally suitable as high performance replacements of standard emitters.

FEATUREs
● Extra high radiant power
● Low forward voltage
● Suitable for high pulse current operation
● Angle of half intensity ϕ = ± 17°
● Peak wavelength λp = 870 nm
● High reliability
● Good spectral matching to Si photodetectors

APPLICATIONs
    IrDA compatible
    Free air transmission systems
    For control and drive circuits
    Photointerrupters
    Punched tape readers