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TSUS3400 Hoja de datos - Vishay Semiconductors

TSUS3400 image

Número de pieza
TSUS3400

Other PDF
  no available.

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page
5 Pages

File Size
103.6 kB

Fabricante
Vishay
Vishay Semiconductors Vishay

DESCRIPTION
TSUS3400 is an infrared, 950 nm emitting diode in GaAs technology, molded in a clear, blue tinted plastic package.


FEATURES
• Package type: leaded
• Package form: T-1
• Dimensions (in mm): Ø 3
• Peak wavelength: λp = 950 nm
• High reliability
• Angle of half intensity: ϕ = ± 18°
• Low forward voltage
• Radiant power: 20 mW at IF = 100 mA
• Suitable for DC and high pulse current operation
• Good spectral matching with Si photodetectors
• Compliant to RoHS Directive 2002/95/EC and in
   accordance with WEEE 2002/96/EC


APPLICATIONS
• Infrared source in photo interrupters, reflective and
   transmissive sensors


Número de pieza
componentes Descripción
PDF
Fabricante
Infrared Emitting Diode, 950 nm, GaAs
Ver
Vishay Siliconix
Infrared Emitting Diode, 950 nm, GaAs
Ver
Vishay Semiconductors
Infrared Emitting Diode, 950 nm, GaAs
Ver
Vishay Semiconductors
Infrared Emitting Diode, 950 nm, GaAs ( Rev : 2015 )
Ver
Vishay Semiconductors
Infrared Emitting Diode, 950 nm, GaAs ( Rev : 2007 )
Ver
Vishay Semiconductors
Infrared Emitting Diode, 950 nm, GaAs ( Rev : 2009 )
Ver
Vishay Semiconductors
Infrared Emitting Diode, 950 nm, GaAs ( Rev : 2009 )
Ver
Vishay Semiconductors
Infrared Emitting Diode, 950 nm, GaAs
Ver
Vishay Semiconductors
Infrared Emitting Diode, 950 nm, GaAs ( Rev : 2009 )
Ver
Vishay Siliconix
Infrared Emitting Diode, 950 nm, GaAs ( Rev : 2013 )
Ver
Vishay Siliconix

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