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TSUS4300(2008) Hoja de datos - Vishay Semiconductors

TSUS4300 image

Número de pieza
TSUS4300

Other PDF
  1999   lastest PDF  

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page
5 Pages

File Size
102.5 kB

Fabricante
Vishay
Vishay Semiconductors Vishay

DESCRIPTION
TSUS4300 is an infrared, 950 nm emitting diode in GaAs technology molded in a blue tinted plastic package.


FEATURES
• Package type: leaded
• Package form: T-1
• Dimensions (in mm): Ø 3
• Peak wavelength: λp = 950 nm
• High reliability
• Angle of half intensity: ϕ = ± 16°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Package matches with detector TEFT4300
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912


APPLICATIONS
• Infrared remote control and free air transmission systems with low forward voltage and small package requirements
• Emitter in transmissive sensors
• Emitter in reflective sensors

Page Link's: 1  2  3  4  5 

Número de pieza
componentes Descripción
PDF
Fabricante
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs ( Rev : 2008 )
Ver
Vishay Siliconix
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs
Ver
Vishay Semiconductors
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs ( Rev : 2008 )
Ver
Vishay Semiconductors
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs ( Rev : 2008 )
Ver
Vishay Semiconductors
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs ( Rev : 2008 )
Ver
Vishay Semiconductors
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs ( Rev : 2008 )
Ver
Vishay Siliconix
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs ( Rev : 2008 )
Ver
Vishay Semiconductors
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs ( Rev : 2008 )
Ver
Vishay Semiconductors
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs ( Rev : 2008 )
Ver
Vishay Siliconix
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs ( Rev : 2008 )
Ver
Vishay Semiconductors

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