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U630H04BD1C25 Hoja de datos - Zentrum Mikroelektronik Dresden AG

U630H04 image

Número de pieza
U630H04BD1C25

componentes Descripción

Other PDF
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PDF
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page
14 Pages

File Size
206 kB

Fabricante
Zentrum
Zentrum Mikroelektronik Dresden AG Zentrum

Description
The U630H04 has two separate modes of operation: SRAM mode and nonvolatile mode, determined by the state of the NE pin.
In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile operation, data is transferred in parallel from SRAM to EEPROM or from EEPROM to SRAM. In this mode SRAM functions are disabled.


FEATUREs
❐ High-performance CMOS nonvolatile static RAM 512 x 8 bits
❐ 25 and 45 ns Access Times
❐ 12 and 25 ns Output Enable Access Times
❐ Unlimited Read and Write to SRAM
❐ Hardware STORE Initiation (STORE Cycle Time < 10 ms)
❐ Automatic STORE Timing
❐ 105 STORE cycles to EEPROM
❐ 10 years data retention in EEPROM
❐ Automatic RECALL on Power Up
❐ Hardware RECALL Initiation (RECALL Cycle Time < 20 µs)
❐ Unlimited RECALL cycles from EEPROM
❐ Single 5 V ± 10 % Operation
❐ Operating temperature ranges: 0 to 70°C -40 to 85°C
❐ CECC 90000 Quality Standard
❐ ESD characterization according MIL STD 883C M3015.7-HBM
❐ Packages: PDIP28 (300 mil)
                      PDIP28 (600 mil)
                      SOP28 (300 mil)

Page Link's: 1  2  3  4  5  6  7  8  9  10  More Pages 

Número de pieza
componentes Descripción
PDF
Fabricante
HardStore 8K x 8 nvSRAM
Ver
Zentrum Mikroelektronik Dresden AG
HardStore 2K x 8 nvSRAM
Ver
Zentrum Mikroelektronik Dresden AG
HardStore 8K x 8 nvSRAM
Ver
Zentrum Mikroelektronik Dresden AG
HardStore 2K x 8 nvSRAM
Ver
Simtek Corporation
HardStore 2K x 8 nvSRAM
Ver
Simtek Corporation
HardStore 2K x 8 nvSRAM Die
Ver
Simtek Corporation
PowerStore 512 x 8 nvSRAM
Ver
Zentrum Mikroelektronik Dresden AG
PowerStore 512 x 8 nvSRAM
Ver
Zentrum Mikroelektronik Dresden AG
PowerStore8K x 8 nvSRAM
Ver
Unspecified
CMOS nvSRAM High Performance 512 x 8 Nonvolatile Static RAM
Ver
Simtek Corporation

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