Description
The µPD29F064115-X is a flash memory organized of 67,108,864 bits and 142 sectors. Sectors of this memory can be erased at a low voltage (1.65 to 1.95 V, 1.8 to 2.1 V ) supplied from a power source, or the contents of the entire chip can be erased. Memory organization is 4,194,304 words × 16 bits, so that the memory can be programmed in word units. µPD29F064115-X can be read high speed with page mode.

FEATUREs
• Four bank organization enabling simultaneous execution of program / erase and read
• High-speed read with page mode
• Bank organization : 4 banks (8M bits + 24M bits + 24M bits + 8M bits)
• Memory organization : 4,194,304 words × 16 bits
• Sector organization : 142 sectors (4K words × 16 sectors, 32K words × 126 sectors)
   The boot sector is located at the highest address (sector) and the lowest address (sector)
• 3-state output
• Automatic program
   • Program suspend / resume
• Unlock bypass program
• Automatic erase
   • Chip erase
   • Sector erase (sectors can be combined freely)
   • Erase suspend / resume
• Program / Erase completion detection
   • Detection through data polling and toggle bits
   • Detection through RY (/BY) pin
• Sector group protection
   • Any sector group can be protected
   • Any protected sector group can be temporary unprotected
   • Any sector group can be unprotected
• Sectors can be used for boot application
• Hardware reset and standby using /RESET pin
• Automatic sleep mode
• Boot block sector protect by /WP (ACC) pin
• Extra One Time Protect Sector provided
• Program / erase time
   • Program : 11.0 µs / word (TYP.)
   • Sector erase :
      Program / erase cycle : 100,000 cycle
         0.15 s (TYP.) (4K words sector), 0.5 s (TYP.) (32K words sector)
      Program / erase cycle : 300,000 cycle
         0.5 s (TYP.) (4K words sector), 0.7 s (TYP.) (32K words sector)
• Program / erase cycle : 300,000 cycle (MIN.)