High Current Density Surface Mount
Trench MOS Barrier Schottky Rectifier
Ultra Low VF= 0.34 V at IF= 5 A

FEATURES
• Very low profile - typical height of 1.1 mm
• Ideal for automated placement
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
• Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition

TYPICAL APPLICATIONS
For use in low voltage high frequency DC/DC converters, freewheeling, and polarity protection applications.