Description
The V29C51000T/V29C51000B is a high speed 65,536 x 8 bit CMOS flash memory. Programming or erasing the device is done with a single 5 Volt power supply. The device has separate chip enable CE, program enable WE, and output enable OE controls to eliminate bus contention.

FEATUREs
■ 64Kx8-bit Organization
■ Address Access Time: 45, 70, 90 ns
■ Single 5V ± 10% Power Supply
■ Sector Erase Mode Operation
■ 8KB Boot Block (lockable)
■ 512 bytes per Sector, 128 Sectors
   – Sector-Erase Cycle Time: 10ms (Max)
   – Byte-Program Cycle Time: 20µs (Max)
■ Minimum 10,000 Erase-Program Cycles
■ Low power dissipation
   – Active Read Current: 20mA (Typ)
   – Active Program Current: 30mA (Typ)
   – Standby Current: 100µA (Max)
■ Hardware Data Protection
■ Low VCC Program Inhibit Below 3.2V
■ Self-timed program/erase operations with endof-cycle detection
   – DATA Polling
   – Toggle Bit
■ CMOS and TTL Interface
■ Available in two versions
   – V29C51000T (Top Boot Block)
   – V29C51000B (Bottom Boot Block)
■ Packages:
   – 32-pin Plastic DIP
   – 32-pin TSOP-I
   – 32-pin PLCC