General Description
The VDS6616A4A are four-bank Synchronous DRAMs organized as 1,048,576 words x 16 bits x 4 banks, Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle.
Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth high performance memory system applications
   
Features
• JEDEC standard LVTTL 3.3V power supply
• MRS Cycle with address key programs
    -CAS Latency (2 & 3)
    -Burst Length (1,2,3,8,& full page)
    -Burst Type (sequential & Interleave)
• 4 banks operation
• All inputs are sampled at the positive edge of
    the system clock
• Burst Read single write operation
• Auto & Self refresh
• 4096 refresh cycle
• DQM for masking
• Package:54-pins 400 mil TSOP-Type II