General Description
The VDS8608A8A are four-bank Synchronous DRAMs organized as 8,388,608 words x 8 bits x 4 banks. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth high performance memory system applications

FEATUREs
•JEDEC standard LVTTL 3.3V power supply
•MRS Cycle with address key programs
-CAS Latency (2 & 3)
-Burst Length (1,2,4,8,& full page)
-Burst Type (sequential & Interleave)
•4 banks operation
•All inputs are sampled at the positive edge of the system clock
•Burst Read single write operation
•Auto & Self refresh
•DQM for masking
•8192 Refresh Cycles
•Package:54-pins 400 mil TSOP-Type II