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VND670SP(2003) Hoja de datos - STMicroelectronics

VND670SP image

Número de pieza
VND670SP

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14 Pages

File Size
194.6 kB

Fabricante
ST-Microelectronics
STMicroelectronics ST-Microelectronics

DESCRIPTION
The VND670SP is a monolithic device made using STMicroelectronics VIPower technology M0-3, intended for driving motors in full bridge configuration. The device integrates two 30 mΩ Power MOSFET in high side configuration, and provides gate drive for two external Power MOSFET used as low side switches. INA and INB allow to select clockwise or counter clockwise drive or brake; DIAGA/ENA, DIAGB/ENB allow to disable one half bridge and feedback diagnostic. Built-in thermal shut-down, combined with a current limiter, protects the chip in overtemperature and short circuit conditions. Short to battery protects the external connected low-side Power MOSFET.

■ OUTPUT CURRENT:15A PER CHANNEL
■ 5V LOGIC LEVEL COMPATIBLE INPUTS
■ GATE DRIVE FOR TWO EXTERNAL POWER MOS
■ UNDERVOLTAGE AND OVERVOLTAGE SHUT-DOWN
■ OVERVOLTAGE CLAMP
■ THERMAL SHUT DOWN
■ CROSS-CONDUCTION PROTECTION
■ CURRENT LIMITATION
■ VERY LOW STAND-BY POWER CONSUMPTION
■ PWM OPERATION UP TO 10 KHz
■ PROTECTION AGAINST: LOSS OF GROUND AND LOSS OF VCC
■ REVERSE BATTERY PROTECTION (*)

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