512Kx8 BIT CMOS EEPROM MODULE

FEATURES
■ Read Access Times of 150, 200, 250, 300ns
■ JEDEC Standard 32 Pin, Hermetic Ceramic DIP (Package 300)
■ Commercial, Industrial and Military Temperature Ranges
■ MIL-STD-883 Compliant Devices Available
■ Write Endurance 10,000 Cycles
■ Data Retention at 25°C, 10 Years
■ Low Power CMOS Operation: 3mA Standby Typical/100mA Operating Maximum
■ Automatic Page Write Operation Internal Address and Data Latches for 512 Bytes, 1 to 128 Bytes/Row, Four Pages
■ Page Write Cycle Time 10mS Max.
■ Data Polling for End of Write Detection
■ Hardware and Software Data Protection
■ TTL Compatible Inputs and Outputs

256Kx8 BIT CMOS EEPROM MODULE

FEATURES
■ Read Access Times of 150, 200ns
■ JEDEC Standard 32 Pin, Hermetic Ceramic DIP (Package 302)
■ Commercial, Industrial and Military Temperature Ranges
■ MIL-STD-883 Compliant Devices Available
■ Write Endurance 10,000 Cycles
■ Data Retention at 25°C, 10 Years
■ Low Power CMOS Operation: 2mA Standby Typical/90mA Operating Maximum
■ Automatic Page Write Operation Internal Address and Data Latches for 512 Bytes, 1 to 64 Bytes/Row, Eight Pages
■ Page Write Cycle Time 10mS Max.
■ Data Polling for End of Write Detection
■ Hardware and Software Data Protection
■ TTL Compatible Inputs and Outputs

128Kx8 BIT CMOS EEPROM MODULE

FEATURES
■ Read Access Times of 150, 200ns
■ JEDEC Standard 32 Pin, Hermetic Ceramic DIP (Package 300)
■ Commercial, Industrial and Military Temperature Ranges
■ MIL-STD-883 Compliant Devices Available
■ Write Endurance 10,000 Cycles
■ Data Retention at 25°C, 10 Years
■ Low Power CMOS Operation: 1mA Standby Typical/70mA Operating
■ Automatic Page Write Operation Internal Address and Data Latches for 256 Bytes, 1 to 64 Bytes/Row, Four Pages
■ Page Write Cycle Time 10mS Max.
■ Data Polling for End of Write Detection
■ Hardware and Software Data Protection
■ TTL Compatible Inputs and Outputs