General Description
This Power MOSFET is produced using Winsemi's advanced planar stripe, VDMOS technology. This latest technology has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch mode power supply .

FEATUREs
� 2A,600V,RDS(on)(Max 5.0Ω)@VGS=10V
� Ultra-low Gate Charge(Typical 9nC)
� Fast Switching Capability
� 100%Avalanche Tested
� Maximum Junction Temperature Range(150℃)