Descriptions
The WNMD2180 is Dual N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNMD2180 is Pb-free and Halogen-free.

FEATUREs
● Trench Technology
● Supper high density cell design
● Excellent ON resistance for higher DC current
● Extremely Low Threshold Voltage
● Small package PDFN3×3-8L

APPLICATIONs
● Driver for Relay, Solenoid, Motor, LED etc.
● DC-DC converter circuit
● Power Switch
● Load Switch
● Charging