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WNMD9926 Hoja de datos - Will Semiconductor Ltd.

WNMD9926 image

Número de pieza
WNMD9926

Other PDF
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page
8 Pages

File Size
934.3 kB

Fabricante
WILLSEMI
Will Semiconductor Ltd. WILLSEMI

Descriptions
The WNMD9926 is the Dual N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNMD9926 is Pb-free.


FEATUREs
● Trench Technology
● Supper high density cell design
● Excellent ON resistance
● Extremely Low Threshold Voltage
● package SOP-8L


APPLICATIONs
● DC/DC converters
● Power supply converters circuit
● Load/Power Switching for portable device


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