■ General Description
The XP132A11A1SR is a P-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
The small SOP-8 package makes high density mounting possible.
 
◆ P-Channel Power MOS FET
◆ DMOS Structure
◆ Low On-State Resistance : 0.11Ω (max)
◆ Ultra High-Speed Switching
◆ SOP - 8 Package

■ Features
  Low on-state resistance : Rds (on) = 0.065Ω ( Vgs = -10V )
                                   Rds (on) = 0.11Ω ( Vgs = -4.5V )
  Ultra high-speed switching
  Operational Voltage : -4.5V
  High density mounting : SOP - 8

■ Applications
● Notebook PCs
● Cellular and portable phones
● On - board power supplies
● Li - ion battery systems