HOME >>> 10JL2C48A Datasheet

10JL2C48A Hoja de datos

Fabricante

Número de pieza

componentes Descripción

PDF

Toshiba

10JL2C48A_1999

TOSHIBA HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE

Toshiba

TOSHIBA HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE

Match & Start : 10JL2C48A

Toshiba

10J301

Discrete IGBT - 30G124 ~ 30F125

Toshiba

10J303

TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT

Nihon Inter Electronics

DIODE

National Instruments Corporation

Standard Recovery Diode

Nihon Inter Electronics

DIODE

Toshiba

TOSHIBA HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE

Toshiba

RECTIFIER STACK (BRIDGE)

Nihon Inter Electronics

DIODE

SUNMATE electronic Co., LTD

AXIAL LEADED SILICON RECTIFIER DIODES

SUNMATE electronic Co., LTD

AXIAL LEADED SILICON RECTIFIER DIODES

1 2

English

Korean

Chinese

Japanese

Russian

All Rights Reserved© datasheetbank.com [ Política De Privacidad ]