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2SC3581   Hoja de datos

coincide,
conparecido a
2SC3581   
comienza con
N/A
termina en
N/A
Incluido
N/A
Fabricante
Número de pieza
componentes Descripción
PDF
Isahaya
Isahaya Electronics
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EXITAXIAL TYPE
Ver
Match & Start : 2SC3581
CEL
California Eastern Laboratories.
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
Ver
ETC3
Unspecified
SEMICONDUCTOR SELECTION GUIDE
Ver
Iscsemi
Inchange Semiconductor
Silicon NPN RF Transistor
Ver
Isahaya
Isahaya Electronics
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EXITAXIAL TYPE
Ver
Iscsemi
Inchange Semiconductor
Silicon NPN RF Transistor
Ver
ETC3
Unspecified
SEMICONDUCTOR SELECTION GUIDE
Ver
Twtysemi
TY Semiconductor
NPN Silicon Epitaxial Transistor
Ver
NEC
NEC => Renesas Technology
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
Ver
ETC3
Unspecified
SEMICONDUCTOR SELECTION GUIDE
Ver
Isahaya
Isahaya Electronics
FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE
Ver
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