Fabricante
Número de pieza
componentes Descripción
PDF
![CEL](/logo/CEL.png)
California Eastern Laboratories.
LASER DIODE 1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE FOR 9.8 Gb/s CPRI and 10G E-PON ONU APPLICATION
![Renesas](/logo/Renesas.png)
Renesas Electronics
LASER DIODE 1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE
![CEL](/logo/CEL.png)
California Eastern Laboratories.
LASER DIODE 1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE FOR 9.8 Gb/s CPRI and 10G E-PON ONU APPLICATION
![CEL](/logo/CEL.png)
California Eastern Laboratories.
LASER DIODE 1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE FOR 9.8 Gb/s CPRI and 10G E-PON ONU APPLICATION