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FB11N50A   Hoja de datos

coincide,
conparecido a
comienza con
N/A
termina en
N/A
Fabricante
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International Rectif...
Vishay Semiconductor...
 
 
Fabricante
Número de pieza
componentes Descripción
PDF
IR
International Rectifier
HEXFET® Power MOSFET VDSS = 500V, RDS(on) = 0.52 Ohm, ID = 11A
Ver
Vishay
Vishay Semiconductors
Power MOSFET(Vdss=500V/ Rds(on)max=0.52ohm/ Id=11A)
Ver
Match & Start : FB11N50A
EUPEC
eupec GmbH
IGBT-Modules
Ver
Infineon
Infineon Technologies
EasyPIM™ module with Trench/Fieldstopp IGBT3 and Emitter Controlled 3 diode and NTC
Ver
EIC
Electronics Industry
FAST RECOVERY GLASS PASSIVATED BRIDGE RECTIFIERS
Ver
EIC
Electronics Industry
FAST RECOVERY GLASS PASSIVATED BRIDGE RECTIFIERS
Ver
EIC
Electronics Industry
FAST RECOVERY GLASS PASSIVATED BRIDGE RECTIFIERS
Ver
EIC
Electronics Industry
FAST RECOVERY GLASS PASSIVATED BRIDGE RECTIFIERS
Ver
EUPEC
eupec GmbH
IGBT-Modules
Ver
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