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FB11N50A Hoja de datos - International Rectifier

IRFB11N50A image

Número de pieza
FB11N50A

Other PDF
  no available.

PDF
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page
8 Pages

File Size
92.2 kB

Fabricante
IR
International Rectifier IR

Benefits
Low Gate Charge Qg results in Simple Drive Requirement
Improved Gate, Avalanche and dynamic dv/dt Ruggedness
Fully Characterized Capacitance and Avalanche Voltage and Current

Applications
Switch Mode Power Supply ( SMPS )
Uninterruptable Power Supply
High speed power switching

 

Page Link's: 1  2  3  4  5  6  7  8 

Número de pieza
componentes Descripción
PDF
Fabricante
Power MOSFET(Vdss=500V/ Rds(on)max=0.52ohm/ Id=11A)
Ver
Vishay Semiconductors
HEXFET power MOSFET. VDSS = -60V, RDS(on) = 0.28 Ohm, ID = -11A
Ver
International Rectifier
Power MOSFET(Vdss=-60V/ Rds(on)=0.28ohm/ Id=-11A)
Ver
International Rectifier
HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.450 Ohm, ID = 14A
Ver
International Rectifier
HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.26 Ohm, ID = 17A
Ver
International Rectifier
Power MOSFET (Vdss=500V, Rds(on)=3.0ohm, Id=2.1A)
Ver
International Rectifier
Power MOSFET(Vdss=500V, Rds(on)=3.0ohm, Id=2.5A)
Ver
International Rectifier
HEXFET power MOSFET. VDSS = 500V, RDS(on) = 3.0 Ohm, ID = 2.1 A
Ver
International Rectifier
Power MOSFET(Vdss=500V, Rds(on)=3.0ohm, Id=2.5A)
Ver
International Rectifier
HEXFET® Power MOSFET VDSS=500V, RDS(on)typ.=0.135Ω, ID=32A
Ver
International Rectifier

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