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FF650R17IE4DP_B2   Hoja de datos

coincide,
conparecido a
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comienza con
termina en
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Incluido
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Fabricante
Número de pieza
componentes Descripción
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Infineon
Infineon Technologies
PrimePACK™2 module with Trench/Fieldstop IGBT4 and Emitter Controlled diode
Ver
Match & Start : FF650R17IE4DP_B2
Leshan-Radio
Leshan Radio Company
FF6
Surface MountGlass Passivated SuperFast Rectifiers
Ver
Iscsemi
Inchange Semiconductor
Fast Recovery Rectifier
Ver
THINKISEMI
Thinki Semiconductor Co., Ltd.
60.0 Ampere,300 Volt Common Cathode Fast Recovery Epitaxial Diode
Ver
Infineon
Infineon Technologies
PrimePACK™2 module with Trench/Fieldstop IGBT4 and Emitter Controlled diode
Ver
Infineon
Infineon Technologies
EconoDUAL™3 module with trench/fieldstop IGBT4 and Emitter Controlled Diode and NTC
Ver
Infineon
Infineon Technologies
62mm C-Series module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode
Ver
Infineon
Infineon Technologies
EconoDUAL™3 module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and NTC
Ver
Infineon
Infineon Technologies
PrimePACK™2 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC
Ver
Infineon
Infineon Technologies
EconoDUAL™3 module with trench/fieldstop IGBT4 and Emitter Controlled Diode and NTC
Ver
Infineon
Infineon Technologies
EconoDUAL™3 module with Trench/Fieldstop IGBT4 and Emitter Controlled diode and NTC
Ver
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