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GB10MPS17-247   Hoja de datos

coincide,
conparecido a
GB10MPS17-247   GB10MPS17-247_   
comienza con
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termina en
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Fabricante
Número de pieza
componentes Descripción
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GENESIC
GeneSiC Semiconductor, Inc.
GB10MPS17-247_2018
Silicon Carbide Power Schottky Diode
Ver
GENESIC
GeneSiC Semiconductor, Inc.
GB10MPS17-247
Silicon Carbide Schottky Diode
Ver
GENESIC
GeneSiC Semiconductor, Inc.
GB10MPS17-247_
SiC Schottky MPS™
Ver
Match & Start : GB10MPS17-247
ST-Microelectronics
STMicroelectronics
GB10NB60S
N-CHANNEL 10A - 600V - TO-220/TO-220FP/D²PAK PowerMESH™ IGBT
Ver
ST-Microelectronics
STMicroelectronics
GB10NC60KD
N-channel 600V - 10A - D2PAK / TO-220 / TO-220FP Short circuit rated PowerMESH™ IGBT
Ver
Vishay
Vishay Semiconductors
GB100DA60UP_2010
Insulated Gate Bipolar Transistor (Warp 2 Speed IGBT), 100 A
Ver
Vishay
Vishay Semiconductors
GB100DA60UP
Insulated Gate Bipolar Transistor (Warp 2 Speed IGBT), 100 A
Ver
GENESIC
GeneSiC Semiconductor, Inc.
GB10SLT12-CAL_2013
Silicon Carbide Power Schottky Diode
Ver
GENESIC
GeneSiC Semiconductor, Inc.
GB10MPS17-247_2018
Silicon Carbide Power Schottky Diode
Ver
GENESIC
GeneSiC Semiconductor, Inc.
GB10SLT12-252_2014
Silicon Carbide Power Schottky Diode
Ver
GENESIC
GeneSiC Semiconductor, Inc.
GB10SLT12-220
Silicon Carbide Power Schottky Diode
Ver
GENESIC
GeneSiC Semiconductor, Inc.
GB10SLT12-252
Silicon Carbide Schottky Diode
Ver
GENESIC
GeneSiC Semiconductor, Inc.
GB10SLT12-220_2010
Silicon Carbide Power Schottky Diode
Ver
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