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K522H1HACF-B050   Hoja de datos

coincide,
conparecido a
comienza con
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termina en
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Fabricante
Número de pieza
componentes Descripción
PDF
Samsung
Samsung
2Gb (128M x16) NAND Flash + 1Gb (64M x16 ) Mobile DDR SDRAM
Ver
Match & Start : K522H1HACF-B050
LSTD
Laird Tech Smart Technology
K52
Thermally Conductive Insulators
Ver
YIXIN
Shenzhen Yixinwei Technology Co., Ltd.
K52
5.0 AMP SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
Ver
Hitachi
Hitachi -> Renesas Electronics
Silicon N-Channel Junction FET
Ver
Toshiba
Toshiba
SILICON N-CHANNEL MOS TYPE FIELD EFFECT TRANSISTOR
Ver
Toshiba
Toshiba
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (π-MOS)
Ver
LSTD
Laird Tech Smart Technology
Thermally Conductive Insulators
Ver
LSTD
Laird Tech Smart Technology
Thermally Conductive Insulators
Ver
MTRONPTI
MTRONPTI
8 pin DIP, 5.0 Volt, CMOS/TTL, Clock Oscillator
Ver
LSTD
Laird Tech Smart Technology
Thermally Conductive Insulators
Ver
CITC
Chip Integration Technology Corporation
5A Surface Mount Schottky Barrier Rectifiers
Ver
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