NX5315EH Hoja de datos
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Número de pieza
componentes Descripción
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California Eastern Laboratories.
1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
California Eastern Laboratories.
NECʼs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR FTTH PON APPLICATIONS
California Eastern Laboratories.
1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
Match & Start : NX5315EH
California Eastern Laboratories.
NECʼs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 155 Mb/s, 622 Mb/s, 1.25 Gb/s APPLICATIONS
California Eastern Laboratories.
1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, FTTH InGaAsP MQW-FP LASER DIODE
California Eastern Laboratories.
NEC’s 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 1.25 Gb/s AND FTTH PON APPLICATIONS
California Eastern Laboratories.
1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
California Eastern Laboratories.
NEC’s 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR FTTH PON APPLICATIONS
California Eastern Laboratories.
NECʼs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR FTTH PON APPLICATIONS
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