NX6240GP Hoja de datos
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California Eastern Laboratories.
LASER DIODE 1 270 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s E-PON ONU APPLICATION
California Eastern Laboratories.
LASER DIODE 1 270 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s E-PON ONU APPLICATION
Match & Start : NX6240GP
California Eastern Laboratories.
NECʼs 1550 nm InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE FOR 622 Mb/s AND 1.25 Gb/s APPLICATIONS
California Eastern Laboratories.
NEC's 1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR 155 Mb/s AND 622 Mb/s APPLICATIONS
California Eastern Laboratories.
NEC's1550 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR FIBER OPTIC COMMUNICATIONS
California Eastern Laboratories.
NEC's InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE FOR 2.5 Gb/s, CWDM APPLICATIONS
California Eastern Laboratories.
NECʼs 1490 nm InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE FOR FTTH PON APPLICATIONS
California Eastern Laboratories.
NEC's 1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR 2.5 Gb/s APPLICATIONS
California Eastern Laboratories.
NEC's 1550 nm InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE FOR LONG HAUL 2.5 Gb/s APPLICATIONS
California Eastern Laboratories.
NEC's 1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR 155 Mb/s and 622 Mb/s APPLICATIONS
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