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W15NB50F   Hoja de datos

coincide,
conparecido a
N/A
comienza con
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termina en
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Incluido
Fabricante
Número de pieza
componentes Descripción
PDF
ST-Microelectronics
STMicroelectronics
N-CHANNEL 500V - 0.33Ω - 14.6A - T0-247/ISOWATT218 PowerMESH™ MOSFET
Ver
Match & Start : W15NB50F
Infineon
Infineon Technologies
Fast IGBT in NPT-technology
Ver
Infineon
Infineon Technologies
Fast IGBT in NPT-technology
Ver
Infineon
Infineon Technologies
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
Ver
Infineon
Infineon Technologies
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode
Ver
Infineon
Infineon Technologies
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
Ver
Infineon
Infineon Technologies
Reverse conducting IGBT with monolithic body Diode for soft-switching
Ver
Infineon
Infineon Technologies
Fast IGBT in NPT-technology
Ver
Infineon
Infineon Technologies
High speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode
Ver
Infineon
Infineon Technologies
High speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode
Ver
Infineon
Infineon Technologies
High speed switching series third generation
Ver
Infineon
Infineon Technologies
1200V high speed switching series third generation
Ver
Fuji
Fuji Electric
Discrete IGBT (High-Speed V series) 1200V / 15A
Ver
Infineon
Infineon Technologies
Reverse conducting IGBT with monolithic body diode
Ver
Infineon
Infineon Technologies
Reverse Conducting IGBT with monolithic body diode
Ver
Infineon
Infineon Technologies
Reverse Conducting IGBT with monolithic body diode
Ver
Infineon
Infineon Technologies
Reverse conducting IGBT with monolithic body diode
Ver
Infineon
Infineon Technologies
Material Content Data Sheet
Ver
Infineon
Infineon Technologies
Reverse conducting IGBT with monolithic body diode
Ver
Infineon
Infineon Technologies
Reverse conducting IGBT with monolithic body diode
Ver
Infineon
Infineon Technologies
Low Loss DuoPack : IGBT in 2nd generation TrenchStop® technology with soft, fast recovery anti-parallel Emitter Controlled Diode
Ver
Infineon
Infineon Technologies
Low Loss DuoPack : IGBT in 2nd generation TrenchStop® technology with soft, fast recovery anti-parallel EmCon diode
Ver
Fuji
Fuji Electric
Discrete IGBT (High-Speed V series) 1200V / 15A
Ver
Fairchild
Fairchild Semiconductor
Short Circuit Rated IGBT
Ver
Infineon
Infineon Technologies
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
Ver
Infineon
Infineon Technologies
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode
Ver
Infineon
Infineon Technologies
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
Ver
Infineon
Infineon Technologies
Fast IGBT in NPT-technology
Ver
Infineon
Infineon Technologies
Fast IGBT in NPT-technology
Ver
Iscsemi
Inchange Semiconductor
N-Channel MOSFET Transistor
Ver
Iscsemi
Inchange Semiconductor
N-Channel MOSFET Transistor
Ver
Infineon
Infineon Technologies
Cool MOS™ Power Transistor
Ver
Infineon
Infineon Technologies
Cool MOS™ Power Transistor
Ver
Infineon
Infineon Technologies
CoolMOS™ Power Transistor
Ver
Iscsemi
Inchange Semiconductor
N-Channel MOSFET Transistor
Ver
Iscsemi
Inchange Semiconductor
N-Channel MOSFET Transistor
Ver
Fairchild
Fairchild Semiconductor
Short Circuit Rated IGBT
Ver
ST-Microelectronics
STMicroelectronics
N-channel 800 V, 0.3 Ω typ., 14 A SuperMESH™ 5 Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247 packages
Ver
ST-Microelectronics
STMicroelectronics
N-channel 800 V, 0.3 Ω typ., 14 A MDmesh™ K5 Power MOSFETs in D2PAK, TO-220FP, TO-220 and TO-247 packages
Ver
ST-Microelectronics
STMicroelectronics
N-channel 950 V, 0.41 Ω typ., 12 A SuperMESH™ 5 Power MOSFETs in TO-220FP, TO-220 and TO-247 packages
Ver
Iscsemi
Inchange Semiconductor
N-Channel MOSFET Transistor
Ver
ST-Microelectronics
STMicroelectronics
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
Ver
ST-Microelectronics
STMicroelectronics
N-CHANNEL 500V - 0.33Ω - 14.6A - T0-247/ISOWATT218 PowerMESH™ MOSFET
Ver
ST-Microelectronics
STMicroelectronics
N-CHANNEL 500V - 0.33Ω - 14.6A - T0-247/ISOWATT218 PowerMESH™ MOSFET
Ver
ST-Microelectronics
STMicroelectronics
N-channel 500V - 0.30Ω- 14A TO-220/FP/D2PAK/I2PAK/TO- 2 4 7 Zener-protected SuperMESH™ Power MOSFET
Ver
ST-Microelectronics
STMicroelectronics
N-CHANNEL 900V - 0.40Ω -15ATO-247 Zener-Protected SuperMESH™ MOSFET
Ver
ST-Microelectronics
STMicroelectronics
N-channel 600V - 0.270Ω - 14A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh™ Power MOSFET
Ver
ST-Microelectronics
STMicroelectronics
N-channel 600 V - 0.27 Ω - 14 A - FDmesh™ II Power MOSFET D2PAK, I2PAK, TO-220, TO-220FP, TO-247
Ver
Iscsemi
Inchange Semiconductor
N-Channel MOSFET Transistor
Ver
ST-Microelectronics
STMicroelectronics
N-channel 650V - 0.25Ω - 15.5A - TO-220/FP - D2/I2PAK - TO-247 Second generation MDmesh™ Power MOSFET
Ver
SYNQOR
SynQor Worldwide Headquarters
Half-brick DC-DC Converter
Ver
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