X5302E   Hoja de datos

California Eastern Laboratories.

NEC's 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR FIBER OPTIC COMMUNICATIONS

California Eastern Laboratories.

NEC's 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR FIBER OPTIC COMMUNICATIONS

California Eastern Laboratories.

NEC's 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR FIBER OPTIC COMMUNICATIONS

Maxim Integrated

Low-Power, 12-Bit Voltage-Output DAC with Serial Interface

PANJIT INTERNATIONAL

SCHOTTKY BARRIER RECTIFIER

Wing Shing International Group

NPN EPITAXIAL SILICON TRANSISTOR

Freescale Semiconductor

50 kPa Uncompensated Silicon Pressure Sensors

California Eastern Laboratories.

NECʼs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 155 Mb/s, 622 Mb/s, 1.25 Gb/s AND FTTH APPLICATIONS

Renesas Electronics

1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE

Inchange Semiconductor

Silicon NPN Power Transistors

California Eastern Laboratories.

NEC’s 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 155 Mb/s and 622 Mb/s APPLICATIONS

Maxim Integrated

Calibrated, Quad, 12-Bit Voltage-Output DACs with Serial Interface

California Eastern Laboratories.

NECʼs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 2.5 Gb/s INTRA-OFFICE APPLICATION