VNP35N07FI(2013) Ver la hoja de datos (PDF) - STMicroelectronics
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VNP35N07FI Datasheet PDF : 13 Pages
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VNP35N07FI
®
VNB35N07/VNV35N07
”OMNIFET”:
FULLY AUTOPROTECTED POWER MOSFET
TYPE
V c la mp
RDS( o n )
Ilim
VNP35N07FI
70 V
0.028 Ω
35 A
VNB35N07
70 V
0.028 Ω
35 A
VNV35N07
70 V
0.028 Ω
35 A
) s LINEAR CURRENT LIMITATION
t(s s THERMAL SHUT DOWN
c s SHORT CIRCUIT PROTECTION
u s INTEGRATED CLAMP
d s LOW CURRENT DRAWN FROM INPUT PIN
ro s DIAGNOSTIC FEEDBACK THROUGH INPUT
P PIN
te s ESD PROTECTION
s DIRECT ACCESS TO THE GATE OF THE
le POWER MOSFET (ANALOG DRIVING)
so s COMPATIBLE WITH STANDARD POWER
b MOSFET
- O DESCRIPTION
) The VNP35N07FI, VNB35N07 and VNV35N07
t(s are monolithic devices made using
STMicroelectronics VIPower M0 Technology,
uc intended for replacement of standard power
d MOSFETS in DC to 50 KHz applications. Built-in
ro thermal shut-down, linear current limitation and
P overvoltage clamp protect the chip in harsh
Obsolete BLOCK DIAGRAM (∗)
ISOWATT220
3
2
1
3
1
D2PAK
TO-263
10
1
PowerSO-10
enviroments.
Fault feedback can be detected by monitoring the
voltage at the input pin.
(∗) PowerSO-10 Pin Configuration : INPUT = 6,7,8,9,10; SOURCE = 1,2,4,5; DRAIN = TAB
September 2013
1/13
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