VNP35N07FI(2013) Ver la hoja de datos (PDF) - STMicroelectronics
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VNP35N07FI Datasheet PDF : 13 Pages
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VNP35N07FI-VNB35N07-VNV35N07
ABSOLUTE MAXIMUM RATING
Symbol
P ar ame t er
Value
Unit
Po werS O-10
D2PAK
ISOW AT T22 0
VDS Drain-source Voltage (Vin = 0)
Internally Clamped
V
Vin Input Voltage
18
V
ID
Drain Current
Internally Limited
A
IR
Reverse DC Output Current
-50
A
Vesd Electrostatic Discharge (C= 100 pF , R=1.5 KΩ)
2000
V
Pto t Total Dissipat ion at Tc = 25 oC
) Tj
Operating Junction T emperature
t(s Tc Case Operating Temperature
c Tst g Storage Temperature
125
40
W
Internally Limited
oC
Internally Limited
oC
-55 to 150
oC
rodu THERMAL DATA
te P Rthj-case Thermal Resistance Junction-case
le Rthj-amb Thermal Resistance Junction-ambient
ISOWATT220 PowerSO-10
Max
3. 12
1
Max
62. 5
50
D2PAK
1
62.5
oC/W
oC/W
so ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
b OFF
- O Symbol
t(s) VCLAMP
uc VCLTH
rod VINCL
P IDSS
olete IISS
P a ram et er
Drain-source Clamp
Voltage
Drain-source Clamp
Threshold Voltage
Input-Source Reverse
Clamp Voltage
Zero Input Voltage
Drain Current (Vin = 0)
Supply Current from
Input Pin
Test Conditions
ID = 200 mA Vin = 0
ID = 2 mA Vin = 0
Iin = -1 mA
VDS = 13 V Vin = 0
VDS = 25 V Vin = 0
VDS = 0 V Vin = 10 V
Min.
60
Typ .
70
55
-1
250
M a x.
80
-0.3
50
200
500
Unit
V
V
V
µA
µA
µA
Obs ON (∗)
Symb ol
VIN(th)
RDS( o n )
P a ram et er
Input Threshold
Voltage
Static Drain-source On
Re s is ta nc e
Test Conditions
VDS = Vin ID + Iin = 1 mA
Vin = 10 V ID = 18 A
Vin = 5 V ID = 18 A
Min.
0.8
Typ .
M a x.
3
Unit
V
0.028 Ω
0.035 Ω
DYNAMIC
Symb ol
gfs (∗)
Coss
P a ram et er
Forward
T r ans c on duc ta nc e
Output Capacitance
2/13
Test Conditions
VDS = 13 V ID = 18 A
VDS = 13 V f = 1 MHz Vin = 0
Min.
20
Typ .
25
M a x.
Unit
S
980 1400 pF
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