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IRF6602TR1

HEXFET
Power MOSFET

International Rectifier 

IRF6602/IRF6602TR1

Static @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

BVDSS

∆ΒVDSS/∆TJ

RDS(on)

VGS(th)

∆VGS(th)

Drain-to-Source Breakdown Voltage

20 ––– ––– V VGS = 0V, ID = 250µA

Breakdown Voltage Temp. Coefficient –––

Static Drain-to-Source On-Resistance –––

–––

22

10

14

–––

13

19

mV/°C Reference to 25°C, ID = 1mA

e mΩ VGS = 10V, ID = 11A

e VGS = 4.5V, ID = 8.8A

Gate Threshold Voltage

1.0 2.0 2.3 V VDS = VGS, ID = 250µA

Gate Threshold Voltage Coefficient

––– -4.4 ––– mV/°C

––– ––– 100

VDS = 20V, VGS = 0V

IDSS

Drain-to-Source Leakage Current

––– ––– 20 µA VDS = 16V, VGS = 0V

––– ––– 125

VDS = 16V, VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Forward Leakage

––– ––– 200 nA VGS = 20V

Gate-to-Source Reverse Leakage

––– ––– -200

VGS = -20V

gfs

Qg

Qgs1

Qgs2

Qgd

Qgodr

Forward Transconductance

Total Gate Charge

Pre-Vth Gate-to-Source Charge

Post-Vth Gate-to-Source Charge

Gate-to-Drain Charge

Gate Charge Overdrive

20 ––– –––

––– 12 18

––– 3.5 –––

––– 1.3 –––

––– 4.2 –––

––– 3.0 –––

S VDS = 10V, ID = 8.8A

VDS = 10V

nC VGS = 4.5V

ID = 8.8A

See Fig. 16

Qsw

Switch Charge (Qgs2 + Qgd)

––– 5.5 –––

Qoss

Output Charge

RG

Gate Resistance

td(on)

Turn-On Delay Time

tr

Rise Time

td(off)

Turn-Off Delay Time

––– 19 ––– nC VDS = 16V, VGS = 0V

––– 2.8 4.2

––– 33 –––

Ω

Ãe VDD = 15V, VGS = 4.5V

––– 6.0 –––

ID = 8.8A

––– 14 ––– ns Clamped Inductive Load

tf

Fall Time

––– 12 –––

Ciss

Input Capacitance

––– 1420 –––

VGS = 0V

Coss

Output Capacitance

––– 960 ––– pF VDS = 10V

Crss

Reverse Transfer Capacitance

––– 100 –––

ƒ = 1.0MHz

Avalanche Characteristics

EAS

IAR

EAR

d Parameter

Single Pulse Avalanche Energy

Ù Avalanche Current

™ Repetitive Avalanche Energy

Typ.

–––

–––

–––

Max.

97

8.8

4.2

Units

mJ

A

mJ

Diode Characteristics

Parameter

IS

Continuous Source Current

Min. Typ. Max. Units

Conditions

––– ––– 48

MOSFET symbol

D

(Body Diode)

ISM

Pulsed Source Current

Ù (Body Diode)

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

––– ––– 380

––– 0.83 1.2

––– 42 62

––– 51 77

A showing the

integral reverse

G

e p-n junction diode.

S

V TJ = 25°C, IS = 8.8A, VGS = 0V

e ns TJ = 25°C, IF = 8.8A

nC di/dt = 100A/µs

2

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