IRF6602TR1 Ver la hoja de datos (PDF) - International Rectifier
Número de pieza
componentes Descripción
Lista de partido
IRF6602TR1 Datasheet PDF : 11 Pages
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IRF6602/IRF6602TR1
100000
10000
1000
100
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
10
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
6.0
ID= 8.8A
5.0
4.0
VDS= 16V
VDS= 10V
3.0
2.0
1.0
0.0
0
5
10
15
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
TJ= 150 ° C
10
T J= 25 ° C
1
0.1
0.2
0.4
0.6
0.8
1.0
V SD,Source-to-Drain Voltage (V)
V GS = 0 V
1.2
1.4
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
10
1msec
10msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
0
1
10
100
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating
Area
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