IRF6602TR1 Ver la hoja de datos (PDF) - International Rectifier

Número de pieza

componentes Descripción

Lista de partido

IRF6602TR1

HEXFET
Power MOSFET

International Rectifier 

IRF6602/IRF6602TR1

1000

100

VGS

TOP

10V

5.0V

4.5V

4.0V

3.5V

3.3V

3.0V

BOTTOM 2.7V

1000

100

VGS

TOP

10V

5.0V

4.5V

4.0V

3.5V

3.3V

3.0V

BOTTOM 2.7V

10

2.7V

1

0.1

20µs PULSE WIDTH

Tj = 25°C

1

10

100

VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

2.7V

10

1

0.1

20µs PULSE WIDTH

Tj = 150°C

1

10

100

VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

100.00

10.00

TJ = 150°C

TJ = 25°C

2.0

I D = 11A

1.5

1.0

1.00

2.0

VDS = 15V

20µs PULSE WIDTH

2.5

3.0

3.5

4.0

4.5

5.0

VGS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

0.5

V GS = 10V

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ, Junction Temperature

( ° C)

Fig 4. Normalized On-Resistance

Vs. Temperature

www.irf.com

3

Share Link: