IRF6601TR1 Ver la hoja de datos (PDF) - International Rectifier
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IRF6601TR1 Datasheet PDF : 13 Pages
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PD - 94366F
IRF6601/IRF6601TR1
HEXFET® Power MOSFET
l Application Specific MOSFETs
l Ideal for CPU Core DC-DC Converters
l Low Conduction Losses
l Low Switching Losses
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible
l Compatible with exisiting Surface Mount
Techniques
VDSS
20V
RDS(on) max
3.8mΩ@VGS = 10V
5.0mΩ@VGS = 4.5V
Qg
30nC
MT
DirectFET ISOMETRIC
Applicable DirectFET Package/Layout Pad (see p.9, 10 for details)
SQ
SX
ST
MQ
MX
MT
Description
The IRF6601 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to
achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET
package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,
infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods
and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IM-
PROVING previous best thermal resistance by 80%.
The IRF6601 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction
and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the
latest generation of processors operating at higher frequencies. The IRF6601 has been optimized for parameters that are
critical in synchronous buck converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6601
offers particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications.
Absolute Maximum Ratings
Parameter
Max.
Units
VDS
Drain-to-Source Voltage
20
V
VGS
ID @ TC = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
c Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
g Power Dissipation
g Power Dissipation
±20
85
26
A
20
200
3.6
2.3
W
PD @TC = 25°C Power Dissipation
42
Linear Derating Factor
TJ
Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
RθJA
RθJA
RθJA
RθJC
RθJ-PCB
f Parameter
Junction-to-Ambient
g Junction-to-Ambient
h Junction-to-Ambient
i Junction-to-Case
Junction-to-PCB Mounted
Notes through are on page 11
www.irf.com
0.029
-40 to + 150
Typ.
–––
12.5
20
–––
1.0
Max.
35
–––
–––
3.0
–––
W/°C
°C
Units
°C/W
1
03/09/05
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