IRF6601TR1 Ver la hoja de datos (PDF) - International Rectifier
Número de pieza
componentes Descripción
Lista de partido
IRF6601TR1 Datasheet PDF : 13 Pages
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IRF6601/IRF6601TR1
6000
5000
4000
3000
2000
V GS
C iss
C rss
C oss
= 0V,
= Cgs
= Cgd
= Cds
f = 1MHz
+ C gd , Cds
+ C gd
SHORTED
Ciss
Coss
1000
Crss
0
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
12.0
ID= 16A
10.0
8.0
VDS= 16V
VDS= 10V
6.0
4.0
2.0
0.0
0
10
20
30
40
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000.0
100.0
10.0
TJ = 150°C
TJ = 25°C
1.0
0.1
0.0
VGS = 0V
0.5
1.0
1.5
2.0
VSD, Source-toDrain Voltage (V)
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
10
1msec
Tc = 25°C
Tj = 150°C
Single Pulse
1
0
1
10msec
10
100
VDS , Drain-toSource Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
Fig 8. Maximum Safe Operating
Area
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