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IRF6601TR1

HEXFET Power MOSFET

International Rectifier 

IRF6601/IRF6601TR1

Static @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

BVDSS

∆ΒVDSS/∆TJ

RDS(on)

VGS(th)

∆VGS(th)/∆TJ

Drain-to-Source Breakdown Voltage

20 ––– ––– V VGS = 0V, ID = 250µA

Breakdown Voltage Temp. Coefficient –––

Static Drain-to-Source On-Resistance –––

–––

19

3.2

4.4

–––

3.8

5.0

mV/°C Reference to 25°C, ID = 1mA

e mΩ VGS = 10V, ID = 26A

e VGS = 4.5V, ID = 21A

Gate Threshold Voltage

1.0 1.62 2.2 V VDS = VGS, ID = 250µA

Gate Threshold Voltage Coefficient

––– -4.6 ––– mV/°C

––– ––– 100

VDS = 20V, VGS = 0V

IDSS

Drain-to-Source Leakage Current

––– ––– 20 µA VDS = 16V, VGS = 0V

––– ––– 100

VDS = 16V, VGS = 0V, TJ = 70°C

IGSS

Gate-to-Source Forward Leakage

––– ––– 100 nA VGS = 20V

Gate-to-Source Reverse Leakage

––– ––– -100

VGS = -20V

gfs

Forward Transconductance

Qg

Total Gate Charge

50 ––– –––

––– 30 45

S VDS = 10V, ID = 21A

Qgs1

Qgs2

Qgd

Qgodr

Pre-Vth Gate-to-Source Charge

Post-Vth Gate-to-Source Charge

Gate-to-Drain Charge

Gate Charge Overdrive

––– 5.4 –––

VDS = 10V

––– 2.9 ––– nC VGS = 4.5V

––– 12 –––

ID = 16A

––– 9.2 –––

See Fig. 16

Qsw

Switch Charge (Qgs2 + Qgd)

––– 15 –––

Qoss

RG

td(on)

tr

td(off)

Output Charge

Gate Resistance

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

––– 48 ––– nC VDS = 16V, VGS = 0V

––– 1.9 3.2

––– 61 –––

Ω

Ãe VDD = 15V, VGS = 4.5V

––– 21 –––

ID = 21A

––– 28 ––– ns Clamped Inductive Load

tf

Fall Time

––– 22 –––

Ciss

Input Capacitance

––– 3440 –––

VGS = 0V

Coss

Output Capacitance

––– 2430 ––– pF VDS = 15V

Crss

Reverse Transfer Capacitance

––– 380 –––

ƒ = 1.0MHz

Avalanche Characteristics

EAS

IAR

EAR

d Parameter

Single Pulse Avalanche Energy

Ù Avalanche Current

™ Repetitive Avalanche Energy

Typ.

–––

–––

–––

Max.

65

21

0.36

Units

mJ

A

mJ

Diode Characteristics

Parameter

IS

Continuous Source Current

Min. Typ. Max. Units

Conditions

––– ––– 26

MOSFET symbol

D

(Body Diode)

ISM

Pulsed Source Current

Ù (Body Diode)

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

––– ––– 200

––– 0.83 1.2

––– 60 90

––– 94 140

A showing the

integral reverse

G

e p-n junction diode.

S

V TJ = 25°C, IS = 21A, VGS = 0V

e ns TJ = 25°C, IF = 21A

nC di/dt = 100A/µs

2

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