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HS-82C85RH(2000) Ver la hoja de datos (PDF) - Intersil

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HS-82C85RH Datasheet PDF : 16 Pages
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Die Characteristics
DIE DIMENSIONS:
2770µm x 3130µm x 483µm ±25µm
INTERFACE MATERIALS:
Glassivation:
Type: SiO2
Thickness: 8kÅ ±1kÅ
Top Metallization:
Type: Al/Si
Thickness: 11kÅ ±2kÅ
Metallization Mask Layout
HS-82C85RH
Substrate:
Radiation Hardened Silicon Gate,
Dielectric Isolation
Backside Finish:
Silicon
ASSEMBLY RELATED INFORMATION:
Substrate Potential:
Unbiased (DI)
ADDITIONAL INFORMATION:
Worst Case Current Density:
1.6 x 104 A/cm2
HS-82C85RH
RDY1 (4)
READY (5)
RDY2 (6)
AEN2 (7)
CLK (8)
M
A
S
K
(20) EFI
(19) F/C
(18) OSC
(17) RES
(16) RESET
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
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