RD00HVS1 Ver la hoja de datos (PDF) - Mitsumi
Número de pieza
componentes Descripción
Lista de partido
RD00HVS1 Datasheet PDF : 7 Pages
| |||
< Silicon RF Power MOS FET (Discrete) >
RD00HVS1
RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W
TYPICAL CHARACTERISTICS
CHANNEL DISSIPATION VS.
AMBIENT TEMPERATURE
4
*1:The material of the PCB
Glass epoxy (t=0.6 mm)
3
On PCB(*1) with Heat-sink
2
1
On PCB(*1)
0
0
40 80 120 160 200
AMBIENT TEMPERATURE Ta(°C)
Vgs-Ids CHARACTERISTICS
1.0
Ta=+25°C
Vds=10V
0.8
0.6
0.4
0.2
0.0
0
1
2
3
4
5
Vgs(V)
Vds-Ids CHARACTERISTICS
1.5
Ta=+25°C
1
Vgs=10V
Vgs=9V
Vgs=8V
Vgs=7V
Vgs=6V
Vgs=5V
0.5
Vgs=4V
Vgs=3V
0
0
2
4
6
8
10
Vds(V)
Vds VS. Ciss CHARACTERISTICS
20
18 Ta=+25°C
f=1MHz
16
14
12
10
8
6
4
2
0
0
5
10
15
20
Vds(V)
Vds VS. Coss CHARACTERISTICS
20
18 Ta=+25°C
f=1MHz
16
14
12
10
8
6
4
2
0
0
5
10
15
20
Vds(V)
Publication Date : Oct．2011
Vds VS. Crss CHARACTERISTICS
4
Ta=+25°C
f=1MHz
3
2
1
0
0
5
10
15
20
Vds(V)
2
Share Link: 