RD00HVS1 Ver la hoja de datos (PDF) - Mitsumi
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RD00HVS1 Datasheet PDF : 7 Pages
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< Silicon RF Power MOS FET (Discrete) >
RD00HVS1
RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W
TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS
35
Gp
30
100
Po
90
25
80
20
70
ηｄ
15
60
10
5
0
-15 -10
Ta=+25°C
50
f=175MHz
Vdd=12.5V 40
Idq=50mA
30
-5 0 5 10 15
Pin(dBm)
Pin-Po CHARACTERISTICS
1.2
120
Po
1.0
100
0.8
ηd 80
0.6
60
Ta=25°C
0.4
f=175MHz 40
Vdd=12.5V
Idq=50mA
0.2
Idd
20
0.0
0
0
5
10 15 20
Pin(mW)
Pin-Po CHARACTERISTICS
35
100
30
Gp
25
Po
90
80
20
70
15
60
ηｄ
10
Ta=+25°C
50
f=520MHz
5
Vdd=12.5V
40
Idq=50mA
0
30
-15 -10 -5 0 5 10 15
Pin(dBm)
Pin-Po CHARACTERISTICS
1.4
140
Po
1.2
120
1.0
100
Ta=25°C
f=520MHz
0.8
Vdd=12.5V 80
ηd
Idq=50mA
0.6
60
0.4
40
Idd
0.2
20
0.0
0
0
5
10 15 20
Pin(mW)
Vdd-Po CHARACTERISTICS
1.4
Ta=25°C
1.2 f=175MHz
Pin=5mW
1 Idq=50mA
Zg=ZI=50 ohm
0.8
0.6
280
Po 240
200
160
Idd
120
0.4
80
0.2
40
0
0
4 6 8 10 12 14
Vdd(V)
Publication Date : Oct．2011
Vdd-Po CHARACTERISTICS
1.6
Ta=25°C
1.4 f=520MHz
Pin=15mW
1.2 Idq=50mA
Zg=ZI=50 ohm
1.0
320
280
Po
240
200
0.8
Idd 160
0.6
120
0.4
80
0.2
40
0.0
0
4 6 8 10 12 14
Vdd(V)
3
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