RD00HVS1 Ver la hoja de datos (PDF) - Mitsumi
Número de pieza
componentes Descripción
Lista de partido
RD00HVS1 Datasheet PDF : 7 Pages
| |||
< Silicon RF Power MOS FET (Discrete) >
RD00HVS1
RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W
TEST CIRCUIT(f=175MHz)
C1
Vgg
W 18mm
Vdd
C2
18mm W
10μF、50V
4.7kOHM
4mm
RF-in
2mm
19.5mm L1 10.5mm
L2 4.5mm
4mm
180pF 18pF
18pF
270OHM
240pF
L1：Enameled wire 4Turns、D：0.43mm、2.46mmO.D
L2：LQG11A68N(68nH、murata)
L3：Enameled wire 9Turns、D：0.43mm、2.46mmO.D
L4：Enameled wire 7Turns、D：0.43mm、2.46mmO.D
C1、C2:1000ｐF、0.022μF in parallel
RD00MVS1
4mm
5mm
3pF
6.5mm
L4
20.5mm
10pF
L3
15mm
4mm
3pF
250pF RF-OUT
Note:Boad material Glass epoxi substrate
Micro strip line width=1mm、50 OHM、er:4.8、t=0.6mm
TEST CIRCUIT(f=520MHz)
Vgg
C1
W 19mm
Vdd
C2
W 19mm
4.7kOHM
RF-in
62pF
8.5mm
18pF
4mm
7.7mm
15pF
3.2mm
RD00MVS1
520MHｚ
2.5mm
0.6mm
0.6mm
8nH
25nH
1.2mm
25.8mm
15mm
7.5nH
24pF
13.6nH
10pF
5pF
22pF
10pF
3pF
7pF
Note:Boad material Glass epoxy copper-clad laminates FR-4
Micro strip line width=1mm、50 OHM、er:4.8、t=0.6mm
C1、C2:1000ｐF、0.022μF in parallel
W:Line width=1.0mm
RF-OUT
Publication Date : Oct．2011
4
Share Link: 