STP200N4F3 Ver la hoja de datos (PDF) - STMicroelectronics

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STP200N4F3

N-channel 40V - 0.0035Ω - 120A - D2PAK - TO-220 planar STripFET™ Power MOSFET

STMicroelectronics 

STB200N4F3 - STP200N4F3

1

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

VDS

VGS

ID (1)

ID (1)

IDM (2)

PTOT

EAS (3)

dv/dt(4)

Drain-source voltage

Gate-source voltage

Drain current (continuous) at TC = 25°C

Drain current (continuous) at TC = 100°C

Drain current (pulsed)

Total dissipation at TC = 25°C

Derating factor

Single pulse avalanche energy

Peak diode recovery voltage slope

Tj

Operating junction temperature

Tstg

Storage temperature

1. Current limited by package

2. Pulse width limited by safe operating area

3. Starting Tj = 25°C, ID = 60A, VDD= 25V

4. ISD ≤60A, di/dt ≤440 A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX.

Table 3. Thermal data

Symbol

Parameter

Rthj-case Thermal resistance junction-case max

Rthj-pcb (1) Thermal resistance junction-pcb max

Rthj-amb Thermal resistance junction-ambient max

1. When mounted on FR-4 board, 1inch² 2 oz. Cu.

Electrical ratings

Value

40

±20

120

120

480

300

2.0

862

4.2

-55 to 175

Unit

V

V

A

A

A

W

W/°C

mJ

V/ns

°C

Value

TO-220

D²PAK

0.50

--

35

62.5

--

Unit

°C/W

°C/W

°C/W

3/14

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