STP200N4F3 Ver la hoja de datos (PDF) - STMicroelectronics
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STP200N4F3
STMicroelectronics
STP200N4F3 Datasheet PDF : 14 Pages
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Electrical characteristics
2
Electrical characteristics
STB200N4F3 - STP200N4F3
(TCASE=25°C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 250µA, VGS= 0
40
V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating,
VDS = Max rating @125°C
10 µA
100 µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±20V
±100 nA
VGS(th) Gate threshold voltage
VDS= VGS, ID = 250µA
2
4
V
RDS(on)
Static drain-source on
resistance
VGS= 10V, ID= 80A
D²PAK
TO-220
0.0035 0.0040 Ω
0.0040 0.0044 Ω
Table 5. Dynamic
Symbol
Parameter
Test conditions
Min.
gfs (1)
Ciss
Coss
Crss
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =10V, ID = 80A
VDS =25V, f=1 MHz, VGS=0
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD=20V, ID = 120A
VGS =10V
(see Figure 14)
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Typ.
200
5100
1270
37
75
23
17
Max. Unit
S
pF
pF
pF
nC
nC
nC
4/14
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