STP200N4F3 Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza

componentes Descripción

Lista de partido

STP200N4F3

N-channel 40V - 0.0035Ω - 120A - D2PAK - TO-220 planar STripFET™ Power MOSFET

STMicroelectronics 

STB200N4F3 - STP200N4F3

Electrical characteristics

Table 6. Switching times

Symbol

Parameter

td(on)

tr

Turn-on delay time

Rise time

td(off)

tf

Off-voltage rise time

Fall time

Test conditions

VDD=20 V, ID=60A,

RG=4.7Ω, VGS=10V

(see Figure 13)

VDD=20 V, ID=60A,

RG=4.7Ω, VGS=10V

(see Figure 13)

Min Typ Max Unit

19

ns

180

ns

90

ns

65

ns

Table 7. Source drain diode

Symbol

Parameter

ISD

ISDM

VSD

trr

Qrr

IRRM

Source-drain current

Source-drain current (pulsed)

Forward on voltage

Reverse recovery time

Reverse recovery charge

Reverse recovery current

Test conditions

Min Typ Max Unit

ISD=120A, VGS=0

ISD=120A, di/dt = 100A/µs,

VDD=20 V, Tj=150°C

(see Figure 18)

120 A

480 A

1.5 V

67

ns

130

nC

4

A

5/14

Share Link: