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BAS21AVD

High-voltage switching diodes

NXP Semiconductors. 

BAS21AVD

High-voltage switching diodes

1 August 2013

Product data sheet

1. General description

Triple high-voltage switching diodes, encapsulated in a SOT457 (SC-74/TSOP6) small

Surface-Mounted Device (SMD) plastic package.

2. Features and benefits

• High switching speed: trr ≤ 50 ns

• Reverse voltage: VR ≤ 200 V

• Repetitive peak reverse voltage: VRRM ≤ 250 V

• Small SMD plastic package

• Low capacitance: Cd ≤ 5 pF

• AEC-Q101 qualified

• Repetitive peak forward current: IFRM ≤ 1 A

3. Applications

• High-voltage switching in surface-mounted circuits

• Automotive

• Communication

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Per diode

IF

forward current

pulsed; tp ≤ 300 µs; δ ≤ 0.02

[1]

VR

reverse voltage

Per diode

IR

reverse current

VR = 200 V; Tamb = 25 °C; pulsed;

tp ≤ 300 µs; δ ≤ 0.02

trr

reverse recovery time IF = 30 mA; IR = 30 mA; IR(meas) = 3 mA;

RL = 100 Ω; Tamb = 25 °C

Min Typ Max Unit

-

-

200 mA

-

-

200 V

-

25

100 nA

-

16

50

ns

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

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