BAS21AVD Ver la hoja de datos (PDF) - NXP Semiconductors.
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BAS21AVD Datasheet PDF : 11 Pages
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NXP Semiconductors
600
IF
(mA)
400
200
mbg384
(1) (2)
(3)
BAS21AVD
High-voltage switching diodes
102
IFSM
(A)
mle165
10
0
0
1
VF (V)
2
Fig. 1.
(1) Tj = 150 °C; typical values
(2) Tj = 25 °C; typical values
(3) Tj = 25 °C; maximum values
Forward current as a function of forward
voltage
102
IR
(µA)
mbg381
10
(1)
(2)
1
10- 1
10- 2
0
100
Tj (°C)
200
(1) VR = VRmax; maximum values
(2) VR = VRmax; typical values
Fig. 3. Reverse current as a function of junction
temperature
1
1
10
102
103
104
105
tp (µA)
Based on square wave currents.
Tj(init) = 25 °C
Fig. 2. Non-repetitive peak forward current as a
function of pulse duration; maximum values
0.6
Cd
(pF)
0.5
mle166
0.4
0.3
0.2
0
10
20
f = 1 MHz; Tj = 25 °C
30
40
VR (V)
Fig. 4. Diode capacitance as a function of reverse
voltage; typical values
BAS21AVD
Product data sheet
All information provided in this document is subject to legal disclaimers.
1 August 2013
© NXP N.V. 2013. All rights reserved
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