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30G123

GT30G123 IGBT 430V / 200A

Toshiba 

1 Features and Structure

IGBT: Insulated Gate BipolarTransistor

IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor

advantage of high-voltage drive.

The conductivity modulation characteristics of a bipolar transistor make it ideal for load

control applications that require high breakdown voltage and high current.

Toshiba offers a family of fast switching IGBTs, which are low in carrier injection and

recombination in carrier.

Features of the Toshiba Discrete IGBTs

The Toshiba discrete IGBTs are available in high-voltage and high-current ratings. They are used in inverter and power

conversion circuits for such diverse applications as motor drivers, uninterruptible power supply (UPS) systems, IH cookers,

plasma display panels (PDPs), strobe flashes and so on.

(1) IGBTs also featuring fast switching

(2) Low collector-emitter saturation voltage even in the large current area

(3) IGBTs featuring a built-in diode with optimal characteristics tailored to specific applications

(4) High input impedance allows voltage drives

(5) Available in a variety of packages

Construction

The basic structure of the planar IGBT consists of four layers (pnpn), as shown in the following figure. Low

saturation voltage is achieved by using a pnp transistor to allow conductivity modulation during conduction. Unlike

MOSFETs, the IGBT does not have an integral reverse diode, since the collector contact is made on the p+ layer.

Planar Structure

Collector

Gate

Emitter

Emitter

Electrode

p n+

n–

n+

n+

p p+

p

n+

p+

Gate

Collector

p+

n

n+

p+

p+

EMITTINESRUMLAETTOAPLROLY SILICON

GATE

GATE

METAL

BONDING

PAD

+

n+

p

p+

n+

+

p

n+

n+

p+

n+

n

+

p+

n

+

p

Collector

METAL

Equivalent Circuit

Collector

Collector

Rn- (MOD)

Gate

Rn- (MOD)

Gate

Emitter

Emitter

–2–

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