30G123 Ver la hoja de datos (PDF) - Toshiba
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componentes Descripción
Lista de partido
30G123 Datasheet PDF : 16 Pages
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Product List
Circuit Configurations Single
Gate
For soft switching
Collector Built-in FRD
Gate
Collector
Emitter
Emitter
IGBTs for Soft-Switching Applications
Main
Applications
Features
Part Number
Absolute Maximum Ratings
VCES
IC
PC
DC Pulsed TC = 25˚C
(V) (A)
(A)
(W)
Package
Circuit
Configuration
(*1)
VCE(sat) Typ.
tf Typ.
@IC @VGE
Load
(V) (A) (V) (μs) (*2)
Remarks
AC 100 V
AC 200 V
AC 100 V
AC 200 V
GT40G121
40
80
100
TO-220AB
400
GT50G321
50
100
130
TO-3P(LH)
◆
1.8 40 15 0.30
1.8 50 15 0.30
GT30J322
GT35J321
30
60
75
37
100
75
TO-3P(N)IS
2.1 50 15 0.25
1.9 50 15 0.19
GT40J321
40
100
110
2.1 40 15 0.15
Fast switching
GT40J322
40
100
110
TO-3P(N)
2.0 40 15 0.24
GT40J323
40
80
120
2.0 40 15 0.06
5th generation
GT50J322
50
100
130
TO-3P(LH) Built-in FRD 2.1 50 15 0.25
600
GT50J322H
50
100
130
2.2 50 15 0.16
Fast switching
GT50J327
50
100
140
TO-3P(N)
1.9 50 15 0.19
GT50J328
50
120
140
2.0 50 15 0.10
Fast switching
GT60J321
60
120
200
1.55 60 15 0.30
GT60J323
GT60J323H
60
120
170
60
120
170
TO-3P(LH)
1.9 60 15 0.16
R
2.1 60 15 0.12
Fast switching
GT15M321
15
30
55
TO-3P(N)IS
1.8 15 15 0.20
GT50M322
50
120
156
TO-3P(N)
2.1 60 15 0.25
GT60M303
900 60
120
170
TO-3P(LH)
GT60M323
60
120
200
2.1 60 15 0.25
2.3 60 15 0.09
Fast switching
GT60M324
60
120
150
1.65 60 15 0.11
6th generation
GT50N321
GT50N322A
50
120
156
50
120
156
TO-3P(N)
Built-in FWD 2.5 60 15 0.25
2.2 60 15 0.10
Fast switching
GT50N324
1000 50
120
150
1.9 60 15 0.12
6th generation
GT60N321
GT60N322
60
120
170
57
120
200
TO-3P(LH)
2.3 60 15 0.25
2.4 40 15 0.11
Fast switching
GT40Q321
1200 40
80
170
TO-3P(N)
2.8 60 15 0.41
GT40T302
1500 40
80
200
TO-3P(LH)
3.7 40 15 0.23
High VCES
*1 ◆ : Single
FRD: Fast Recovery Diode
FWD: Free Wheeling Diode
*2 R : Resistive load
L : Inductive load
: Under development
–9–
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