30G123 Ver la hoja de datos (PDF) - Toshiba
Número de pieza
componentes Descripción
Lista de partido
30G123 Datasheet PDF : 16 Pages
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Product List
Circuit Configurations Single
Gate
For general-purpose inverters
Collector
Built-in FRD
Gate
Emitter
Collector
Emitter
600-V and 1200-V IGBTs (3rd Generation)
Main
Applications
Features
Part Number
GT10Q101
GT10Q301
GT15Q102
GT15Q301
GT25Q102
GT25Q301
GT5J301
GT5J311
GT10J301
GT10J303
GT10J312
GT15J301
GT15J311
GT15J311
GT20J101
GT20J301
GT30J101
GT30J301
GT50J102
GT50J301
Absolute Maximum Ratings
VCES
IC
PC
DC Pulsed Tc = 25˚C
(V) (A) (A) (W)
1200 10 20 140
1200 10 20 140
1200 15 30 170
1200 15 30 170
1200 25 50 200
1200 25 50 200
600 5 10 28
600 5 10 45
600 10 20 90
600 10 20 30
600 10 20 60
600 15 30 35
600 15 30 70
600 15 30 70
600 20 40 130
600 20 40 130
600 30 60 155
600 30 60 155
600 50 100 200
600 50 100 200
Package
Type
Circuit
Configuration
(*1)
TO-3P(N)
–
◆
TO-3P(N)
– Built-in FRD
TO-3P(N)
–
◆
TO-3P(N)
– Built-in FRD
TO-3P(LH)
–
◆
TO-3P(LH)
– Built-in FRD
TO-220NIS
– Built-in FRD
TO-220SM SMD Built-in FRD
TO-3P(N)
– Built-in FRD
TO-220NIS
– Built-in FRD
TO-220SM SMD Built-in FRD
TO-220NIS
– Built-in FRD
TO-220FL
– Built-in FRD
TO-220SM SMD Built-in FRD
TO-3P(N)
–
◆
TO-3P(N)
– Built-in FRD
TO-3P(N)
–
◆
TO-3P(N)
– Built-in FRD
TO-3P(LH)
–
◆
TO-3P(LH)
– Built-in FRD
VCE(sat) Typ.
tf Typ.
@IC @VGE
Load
(*2)
(V) (A) (V) (μs)
2.1 10 15 0.16 L
2.1 10 15 0.16 L
2.1 15 15 0.16 L
2.1 15 15 0.16 L
2.1 25 15 0.16 L
2.1 25 15 0.16 L
2.1
5
15 0.15 L
2.1
5
15 0.15 L
2.1 10 15 0.15 L
2.1 10 15 0.15 L
2.1 10 15 0.15 L
2.1 15 15 0.15 L
2.1 15 15 0.15 L
2.1 15 15 0.15 L
2.1 20 15 0.15 L
2.1 20 15 0.15 L
2.1 30 15 0.15 L
2.1 30 15 0.15 L
2.1 50 15 0.15 L
2.1 50 15 0.15 L
GT30J122 600 30 100 75 TO-3P(N)IS
–
◆
2.1 50 15 0.25 R
Remarks
Partial Switching
Converter
600-V Fast-Switching IGBTs (4th Generation)
Main
Applications
Features
Part Number
GT10J321
GT15J321
GT15J331
GT20J321
GT30J121
GT30J126
GT30J324
GT50J121
GT50J325
VCES
(V)
600
600
600
600
600
600
600
600
600
IC
PC
DC Pulsed Tc = 25˚C
(A) (A) (W)
10 20 29
15 30 30
15 30 70
20 40 45
30 60 170
30 60 90
30 60 170
50 100 240
50 100 240
Package
Type
Circuit
Configuration
(*1)
TO-220NIS
– Built-in FRD
TO-220NIS
– Built-in FRD
TO-220SM SMD Built-in FRD
TO-220NIS
– Built-in FRD
TO-3P(N)
–
◆
TO-3P(N)IS
–
◆
TO-3P(N)
– Built-in FRD
TO-3P(LH)
–
◆
TO-3P(LH)
– Built-in FRD
VCE(sat) Typ.
@IC @VGE
(V) (A) (V)
2.0 10 15
1.9 15 15
1.75 15 15
2.0 20 15
2.0 30 15
1.95 30 15
2.0 30 15
2.0 50 15
2.0 50 15
tf Typ.
Load
(*2)
(μs)
0.05 L
0.03 L
0.10 L
0.04 L
0.05 L
0.05 L
0.05 L
0.05 L
0.05 L
(FS: Fast Switching)
Remarks
Low VCE(sat)
Isolation Package
*1 ◆ : Single
FRD: Fast Recovery Diode
*2 R : Resistive load
L : Inductive load
–7–
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