10N50C Ver la hoja de datos (PDF) - Fairchild Semiconductor
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10N50C Datasheet PDF : 10 Pages
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FQP10N50CF / FQPF10N50CF
N-Channel QFET® FRFET® MOSFET
500 V, 10 A, 610 mΩ
March 2013
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor®’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance and
high avalanche energy strength. These devices are suitable for
switched mode power supplies, active power factor correction
(PFC), and electronic lamp ballasts.
Features
• 10 A, 500 V, RDS(on) = 610 mΩ(Max.) @VGS = 10 V, ID = 5 A
• Low Gate Charge (Typ. 43 nC)
• Low Crss (Typ. 16 pF)
• 100% Avalanche Tested
• Fast Recovery Body Diode
D
GDS
TO-220
GD S
TO-220F
G
S
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM
Drain Current
- Pulsed
(Note 1)
VGSS
EAS
IAR
EAR
dv/dt
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 2)
(Note 1)
(Note 1)
(Note 3)
PD
Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
FQP10N50CF FQPF10N50CF
500
10
10*
6.35
6.35*
40
40*
± 30
388
10
14.3
4.5
143
48
1.14
0.38
-55 to +150
300
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Symbol
Parameter
RθJC
RθJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
FQP10N50CF
0.87
62.5
FQPF10N50CF
2.58
62.5
Unit
°C/W
°C/W
© 2006 Fairchild Semiconductor Corporation
FQP10N50CF / FQPF10N50CF Rev. C0
1
www.fairchildsemi.com
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