10N50C Ver la hoja de datos (PDF) - Fairchild Semiconductor
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10N50C Datasheet PDF : 10 Pages
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Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
1.2
1.1
1.0
0.9
※ Notes :
1. VGS = 0 V
2. ID=250µA
0.8
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 9-1. Maximum Safe Operating Area
for FQP10N50CF
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
* Notes :
1. V = 10 V
GS
2. I = 5.0 A
D
-50
0
50
100
150
200
T , Junction Temperature [oC]
J
Figure 9-2. Maximum Safe Operating Area
for FQPF10N50CF
102
101
100
Operation in This Area
is Limited by R
DS(on)
10 µs
100 µs
1ms
10ms
100ms
DC
10-1
10-2
100
* Notes :
1. T = 25 oC
C
2. T = 150 oC
J
3. Single Pulse
101
102
103
V , Drain-SourceVoltage[V]
DS
Figure 10. Maximum Drain Current
vs. Case Temperature
102
101
100
10-1
10-2
100
Operation in This Area
is Limited by R
DS(on)
10 µs
100 µs
1ms
10ms
100ms
DC
* Notes :
1. T = 25 oC
C
2. T = 150 oC
J
3. Single Pulse
101
102
103
V , Drain-SourceVoltage[V]
DS
12
10
8
6
4
2
0
25
50
75
100
125
T , Case Temperature [oC]
C
© 2006 Fairchild Semiconductor Corporation
FQP10N50CF / FQPF10N50CF Rev. C0
150
4
www.fairchildsemi.com
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