10N50C Ver la hoja de datos (PDF) - Fairchild Semiconductor
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10N50C Datasheet PDF : 10 Pages
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Package Marking and Ordering Information
Device Marking
FQP10N50CF
FQPF10N50CF
Device
FQP10N50CF
FQPF10N50CF
Package
TO-220
TO-220F
Reel Size
-
-
Tape Width
-
-
Quantity
50
50
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Conditions
Min
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA, TJ = 25°C
500
∆BVDSS
/ ∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C
--
IDSS
Zero Gate Voltage Drain Current
VDS = 500 V, VGS = 0 V
--
VDS = 400 V, TC = 125°C
--
IGSSF
Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V
--
IGSSR
Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V
--
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
2.0
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 5 A
--
gFS
Forward Transconductance
Dynamic Characteristics
VDS = 40 V, ID = 5 A
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
td(on)
tr
Turn-On Delay Time
Turn-On Rise Time
VDD = 250 V, ID = 10 A
RG = 25 Ω
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS = 400 V, ID = 10 A
VGS = 10 V
Qgd
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximum Ratings
(Note 4) --
--
--
--
--
--
--
(Note 4, 5)
--
--
--
(Note 4, 5)
--
IS
Maximum Continuous Drain-Source Diode Forward Current
ISM
Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 10 A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 10 A
dIF/dt =100 A/µs
--
--
--
--
(Note 4)
--
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 7 mH, IAS = 10 A, VDD = 50 V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 10 A, di/dt ≤ 200 A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300 µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
Typ
--
0.5
--
--
--
--
--
0.5
15
1610
177
16
29
80
141
80
43
7.5
18.5
--
--
--
50
0.1
Max Units
--
--
10
100
100
-100
V
V/°C
µA
µA
nA
nA
4.0
V
0.61 Ω
--
S
2096 pF
230 pF
24
pF
67
ns
170 ns
290 ns
165 ns
56
nC
--
nC
--
nC
10
A
40
A
1.4
V
ns
--
µC
© 2006 Fairchild Semiconductor Corporation
FQP10N50CF / FQPF10N50CF Rev. C0
2
www.fairchildsemi.com
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